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| UTC 2SC3355 NPN SILICON EPITAXIAL TRANSISTOR HIGH FREQUENCY LOW NOISE AMPLIFIER FEATURES *Low Noise and High Gain *High Power Gain 1 TO-92 1: BASE 2: EMITTER 3: COLLECTOR ABSOLUTE MAXIMUM RATINGS (TA=25C, unless otherwise specified) PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Total power dissipation Junction Temperature Storage Temperature SYMBOL VCBO VCEO VEBO Ic PT Tj Tstg RATING 20 12 3 100 600 150 -65 ~ +150 UNIT V V V mA mW C C ELECTRICAL CHARACTERISTICS (Ta=25C, unless otherwise specified) PARAMETER Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain bandwidth Product Feed-Back Capacitance Noise Figure SYMBOL ICBO IEBO hFE fT Cre NF TEST CONDITIONS VCB=10V, IE=0 VEB=1V, IC=0 VCE=10V, IC=20mA VCE=10V, IC=20mA VCB=10V, IE=0, f=1.0MHz VCE=10V, IC=7mA, f=1.0GHz MIN TYP MAX 1.0 1.0 300 UNIT A A GHz pF dB 50 7 1.0 1.1 UTC UNISONIC TECHNOLOGIES CO., LTD. 1 QW-R201-036,A UTC 2SC3355 NPN SILICON EPITAXIAL TRANSISTOR TYPICAL CHARACTERISTICS (TA=25C) UTC UNISONIC TECHNOLOGIES CO., LTD. 2 QW-R201-036,A UTC 2SC3355 NPN SILICON EPITAXIAL TRANSISTOR UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UTC UNISONIC TECHNOLOGIES CO., LTD. 3 QW-R201-036,A |
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